An IGBT behavioural model based on curve fitting methods

In this paper a simple behavioural IGBT model is proposed. Most of the needed parameters to characterise the model (static curves, leakage currents, etc) are available in the data sheets provided by the manufacturers. Curve fitting methods have been used to approach this model to the data sheets values. Other parameters like the interelectrode capacitances and the internal gate resistor can be experimentally measured. The parameter extraction procedure described in this paper is aimed to be as simple as possible. The advantages of the proposed behavioural model over physic based models are the simplicity of model synthesis and parameterization. These features make behavioural models suitable for application engineers. The simulation results have been compared with real switching waveforms. The IGBT chosen to be modelled is the BSM200GB60DLC IGBT module of Eupec.