DocumentCode :
2461737
Title :
Development of thin-film multijunction thermal converters at NIST
Author :
Kinard, J.R. ; Novotny, D.B. ; Lipe, T.E. ; De-Xiang Huang
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
1996
fDate :
17-21 June 1996
Firstpage :
493
Lastpage :
494
Abstract :
This paper gives an overview of the development of thin-film multijunction thermal converters (FMJTCs) at the National Institute of Standards and Technology (NIST). A historical perspective of film thermal converters is presented, followed by descriptions of the motivation, fabrication processes, physical characteristics and the electrical properties of the FMJTCs produced at NIST. Integrated micropotentiometers which incorporate FMJTCs and thermal converters, produced by an alternative fabrication technology using a CMOS foundry, are also described. The paper concludes with a report on the current status of the FMJTC project and future directions.
Keywords :
CMOS integrated circuits; electric sensing devices; elemental semiconductors; measurement standards; photolithography; potentiometers; semiconductor technology; silicon; thermocouples; thin film devices; CMOS foundry; NIST; National Institute of Standards and Technology; Si; characteristics; electrical properties; fabrication; integrated micropotentiometers; thin-film multijunction thermal converters; Biomembranes; CMOS technology; Dielectric losses; Dielectric thin films; Fabrication; NIST; Semiconductor thin films; Silicon; Transistors; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
Type :
conf
DOI :
10.1109/CPEM.1996.547182
Filename :
547182
Link To Document :
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