Title :
Development of thin-film multijunction thermal converters at NIST
Author :
Kinard, J.R. ; Novotny, D.B. ; Lipe, T.E. ; De-Xiang Huang
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
This paper gives an overview of the development of thin-film multijunction thermal converters (FMJTCs) at the National Institute of Standards and Technology (NIST). A historical perspective of film thermal converters is presented, followed by descriptions of the motivation, fabrication processes, physical characteristics and the electrical properties of the FMJTCs produced at NIST. Integrated micropotentiometers which incorporate FMJTCs and thermal converters, produced by an alternative fabrication technology using a CMOS foundry, are also described. The paper concludes with a report on the current status of the FMJTC project and future directions.
Keywords :
CMOS integrated circuits; electric sensing devices; elemental semiconductors; measurement standards; photolithography; potentiometers; semiconductor technology; silicon; thermocouples; thin film devices; CMOS foundry; NIST; National Institute of Standards and Technology; Si; characteristics; electrical properties; fabrication; integrated micropotentiometers; thin-film multijunction thermal converters; Biomembranes; CMOS technology; Dielectric losses; Dielectric thin films; Fabrication; NIST; Semiconductor thin films; Silicon; Transistors; Wire;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.547182