Development of thin-film multijunction thermal converters at NIST

Author

Kinard, J.R. ; Novotny, D.B. ; Lipe, T.E. ; De-Xiang Huang

Author_Institution

Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1996

fDate

17-21 June 1996

Firstpage

493

Lastpage

494

Abstract

This paper gives an overview of the development of thin-film multijunction thermal converters (FMJTCs) at the National Institute of Standards and Technology (NIST). A historical perspective of film thermal converters is presented, followed by descriptions of the motivation, fabrication processes, physical characteristics and the electrical properties of the FMJTCs produced at NIST. Integrated micropotentiometers which incorporate FMJTCs and thermal converters, produced by an alternative fabrication technology using a CMOS foundry, are also described. The paper concludes with a report on the current status of the FMJTC project and future directions.

Keywords

CMOS integrated circuits; electric sensing devices; elemental semiconductors; measurement standards; photolithography; potentiometers; semiconductor technology; silicon; thermocouples; thin film devices; CMOS foundry; NIST; National Institute of Standards and Technology; Si; characteristics; electrical properties; fabrication; integrated micropotentiometers; thin-film multijunction thermal converters; Biomembranes; CMOS technology; Dielectric losses; Dielectric thin films; Fabrication; NIST; Semiconductor thin films; Silicon; Transistors; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements Digest, 1996 Conference on

Conference_Location

Braunschweig, Germany

Print_ISBN

0-7803-3376-4

Type

conf

DOI

10.1109/CPEM.1996.547182

Filename

547182