DocumentCode :
2462089
Title :
Recent developments in magnetic tunnel junction MRAM
Author :
Tehrani, S. ; Engel, B. ; Chen, E. ; DeHerrera, M. ; Durlam, M. ; Slaughter, J.M.
Author_Institution :
Motorola Labs.
fYear :
2000
fDate :
9-13 April 2000
Firstpage :
282
Lastpage :
282
Keywords :
CMOS technology; Laboratories; Magnetic materials; Magnetic separation; Magnetic switching; Magnetic tunneling; Magnetoresistance; Nonvolatile memory; Polarization; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2000. INTERMAG 2000 Digest of Technical Papers. 2000 IEEE International
Conference_Location :
Toronto, ON, Canada
Print_ISBN :
0-7803-5943-7
Type :
conf
DOI :
10.1109/INTMAG.2000.872059
Filename :
872059
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2462089
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