A microwave miniaturized linearizer using a parallel diode

Author

Yamauchi, K. ; Mori, K. ; Nakayama, M. ; Mitsui, Y. ; Takagi, T.

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan

Volume

3

fYear

1997

fDate

8-13 June 1997

Firstpage

1199

Abstract

A miniaturized linearizer using a parallel diode has been developed. It is composed of a parallel diode and a resistance for d.c. bias feed. The linearizer utilizes a nonlinear resistive element of the diode. In this paper, the operation principle of the linearizer is described. The parallel diode provides a high temperature stability and readiness of bias voltage adjustment. BY applying this linearizer to an S-band power amplifier, an improvement of ACP of 5 dB and power added efficiency of 8.5% has been achieved for the /spl pi//4-shift QPSK modulated signal.

Keywords

UHF power amplifiers; circuit stability; linearisation techniques; microwave diodes; microwave power amplifiers; quadrature phase shift keying; /spl pi//4-shift QPSK modulated signal; 2.7 GHz; 8.5 percent; ACP improvement; DC bias feed; S-band power amplifier; adjacent channel leakage power; bias voltage adjustment; high temperature stability; microwave miniaturized linearizer; nonlinear resistive element; operation principle; parallel diode; power added efficiency; Anodes; Circuits; Diodes; Equations; Gain; Microwave Theory and Techniques Society; Power amplifiers; Power generation; Power measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.596542

Filename

596542