Title :
Point defects in undoped semi-insulating GaAs: correlation between thermally stimulated current and positron annihilation spectroscopies
Author :
Fang, Z.-Q. ; Look, D.C. ; Kuisma, S. ; Saarinen, K. ; Hautojarvi, P.
Author_Institution :
Dept. of Phys., Wright State Univ., Dayton, OH, USA
fDate :
29 Apr-3 May 1996
Abstract :
Point defects and the main electron traps in undoped semi-insulating GaAs grown by vertical gradient freeze and high- and low-pressure liquid encapsulated Czochralski techniques have been studied by positron annihilation (PAS) and thermally stimulated current (TSC) spectroscopies, respectively. We find good correlations between the concentrations of the TSC traps T2 (0.63 eV) and T5 (0.35 eV), and the PAS identified-defects AsGa and V As, respectively. A good correlation between the concentration of intrinsic acceptors (VGa and GaAs) measured by PAS, and the total acceptor concentration measured by infrared absorption, is also found
Keywords :
III-V semiconductors; crystal growth from melt; electron traps; gallium arsenide; impurity absorption spectra; impurity distribution; infrared spectra; positron annihilation; thermally stimulated currents; vacancies (crystal); GaAs; acceptor concentration; electron traps; high-pressure liquid encapsulated Czochralski techniques; infrared absorption; low-pressure liquid encapsulated Czochralski techniques; point defects; positron annihilation; thermally stimulated current; vertical gradient freeze liquid encapsulated Czochralski techniques; Electromagnetic wave absorption; Electron traps; Gallium arsenide; Laboratories; Lifetime estimation; Lighting; Physics; Positrons; Spectroscopy; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570928
