Title :
High efficiency planar oscillator with RF power of 100 mW near 140 GHz
Author :
Wollitzer, M. ; Buechler, J. ; Luy, J.-F.
Author_Institution :
Daimler-Benz AG, Ulm, Germany
Abstract :
An integrated planar oscillator on a high resistivity silicon substrate generates an RF-power of 100 mW in D-band with a peak efficiency of 4.5%. The single sideband S/N ratio of the oscillator is -75 dBc/Hz@100 kHz off carrier. The investigated disc resonator with capacitive coupling to a microstrip line is manufactured by application of micromachining techniques.
Keywords :
IMPATT oscillators; integrated circuit measurement; micromachining; microstrip lines; microstrip resonators; millimetre wave integrated circuits; millimetre wave oscillators; 100 mW; 140 GHz; 4.5 percent; D-band; IMPATT diodes; RF power; Si; capacitive coupling; disc resonator; high resistivity Si substrate; integrated planar oscillator; micromachining techniques; microstrip line; microstrip to waveguide transition; peak efficiency; single sideband S/N ratio; Conductivity; Diodes; Impedance; Micromachining; Microstrip resonators; Oscillators; Permittivity; Radio frequency; Resonance; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596543
