3D TCAD modeling of laser processed c-Si solar cells

Author

Lopez-Gonzalez, Juan M. ; Martin, Isidro ; Ortega, Pablo ; Orpella, Albert ; Alcubilla, Ramon

Author_Institution

Dept. d´Eng. Electron., Univ. Politec. de Catalunya, Barcelona, Spain

fYear

2015

fDate

11-13 Feb. 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents an 3D TCAD model of crystalline Silicon (c-Si) solar cells. Physical parameters used in the model are discussed. Simulation results are compared to experimental current-voltage curves and solar cell figures of merit namely open-circuit voltage, short-circuit current density, fill factor, and conversion efficiency, allowing us to determine an optimum design for these devices. Particularly, the model is applied to conventional p-type c-Si solar cells with rear contacts based on Laser-Firing technique and to Doped by Laser (DopLa) crystalline Silicon solar cells.

Keywords

elemental semiconductors; firing (materials); laser materials processing; semiconductor doping; silicon; solar cells; 3D TCAD modeling; Si; crystalline silicon solar cells; current-voltage curves; fill factor; laser crystalline silicon solar cell doping; laser firing technique; laser processed solar cells; open circuit voltage; short-circuit current; Laser modes; Photovoltaic cells; Silicon; Solid modeling; Substrates; Surface emitting lasers; Three-dimensional displays; 3D numerical simulation; Laser-fired contact; passivated rear silicon; semiconductor device modeling; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2015 10th Spanish Conference on

Conference_Location

Madrid

Type

conf

DOI

10.1109/CDE.2015.7087448

Filename

7087448