Local mode spectroscopy of oxygen-implanted GaAs MBE layers

Author

Alt, H.Ch. ; Müssig, H. ; Brugger, H.

Author_Institution

Fachbereich Mikrotech./Phys. Tech., Fachhochschule Munchen, Germany

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

155

Lastpage

158

Abstract

Defects introduced by oxygen implantation in silicon-doped GaAs layers grown by molecular beam epitaxy (MBE) have been investigated by Fourier transform infrared absorption spectroscopy at low temperatures. After rapid thermal annealing in the temperature range between 630 and 880°C a local mode is observed at 641 cm^-1. The line shows a shift with both the Si and O isotope (²⁸Si/²⁹Si and ¹⁶O/¹⁸O, respectively) mass. Experimental evidence is presented that the silicon-oxygen defect giving rise to this line is responsible for the high-resistive behaviour of the MBE layer

Keywords

Fourier transform spectra; III-V semiconductors; defect absorption spectra; gallium arsenide; infrared spectra; ion implantation; oxygen; rapid thermal annealing; semiconductor epitaxial layers; silicon; 630 to 880 C; Fourier transform infrared absorption spectroscopy; GaAs:Si,O; MBE layers; Si-O defect; ion implantation; line shift; local mode spectroscopy; molecular beam epitaxy; rapid thermal annealing; Annealing; Electromagnetic wave absorption; Fourier transforms; Gallium arsenide; Implants; Infrared spectra; Isotopes; Molecular beam epitaxial growth; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570929

Filename

570929