DocumentCode :
2463059
Title :
A DC to X-band frequency doubler using GaAs HBT MMIC
Author :
Xiangdong Zhang ; Yong-Hoon Yun
Author_Institution :
Corp. R&D Center, M/A-COM Inc., St. Lowell, MA, USA
Volume :
3
fYear :
1997
fDate :
8-13 June 1997
Firstpage :
1213
Abstract :
An analog frequency doubler is developed using GaAs HBT MMIC technology. In this doubler circuit, a novel push-push circuit configuration is used to provide the efficient frequency conversion and the fundamental frequency rejection over a broad bandwidth. The measurement results of the MMIC demonstrate an average 0 to 3 dB conversion gain and a 10 dB rejection on fundamental frequency up to 14 GHz. Thus, this MMIC can be used as a low-cost insertion block to achieve any stable local-oscillation signals up to X-band by multiplying the high quality VCOs at low frequencies, especially the inexpensive Si BJT based VCOs at wireless frequencies.
Keywords :
III-V semiconductors; MMIC frequency convertors; bipolar MMIC; frequency multipliers; gallium arsenide; heterojunction bipolar transistors; 0 to 3 dB; 14 GHz; DC to X-band analog frequency doubler; GaAs; GaAs HBT MMIC; Si BJT VCO; conversion gain; frequency conversion; frequency rejection; insertion block; local-oscillation signal; push-push circuit; wireless frequency; Bandwidth; Circuits; Costs; Frequency conversion; Gain; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Radio frequency; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3814-6
Type :
conf
DOI :
10.1109/MWSYM.1997.596545
Filename :
596545
Link To Document :
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