Title :
Transmission electron microscopy of Al-rich III-V oxides
Author :
Liliental-Weber, Z. ; Li, M. ; Li, G.S. ; Chang-Hasnain, C. ; Weber, E.R.
Author_Institution :
Div. of Mater. Sci., Lawrence Berkeley Lab., CA, USA
fDate :
29 Apr-3 May 1996
Abstract :
Transmission electron microscopy was used for the characterization of microstructure of wet oxidation of AlAs. Dense cubic γ-Al2 O3 was formed with a substantial shrinking after oxidation. Addition of a small amount of Ga (x=0.1) increased granularity of the oxide. Large pores were formed at the interface between the oxide and the low Al content layer. Arsenic accumulation near these pores, the interface, as well at the layer surface was found after oxidation. This study showed that properties of this oxide might be enhanced by the properties of GaAs rich in As (similar to low-temperature-grown-GaAs)
Keywords :
III-V semiconductors; aluminium compounds; crystal microstructure; granular materials; oxidation; semiconductor-insulator boundaries; transmission electron microscopy; γ-Al2O3; AlAs; AlAs-Al2O3; accumulation; granularity; interface pores; microstructure; shrinking; transmission electron microscopy; wet oxidation; Gallium arsenide; III-V semiconductor materials; Laboratories; Materials science and technology; Microstructure; Oxidation; Temperature; Thermal degradation; Transmission electron microscopy; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570930
