Compensation mechanism and transport behaviour of semi-insulating GaAs:Cu

Author

Yang, B.H. ; Seghier, D. ; Gislason, H.P.

Author_Institution

Sci. Inst., Iceland Univ., Reykjavik, Iceland

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

163

Lastpage

166

Abstract

Semi-insulating conditions are obtained by copper diffusion of n-type GaAs in a conventional compensation process accompanied by an apparent transformation of the EL2 donor into another deep donor that pins the Fermi level. The anomalous temperature dependence of the low electron Hall mobility of the GaAs:Cu samples significantly differs from the usual one in undoped semi-insulating samples. It is suggested that potential fluctuations caused by inhomogeneous impurity distribution in the closely compensated samples may be responsible for the anomalous conduction which is similar to that observed in different types of inhomogeneous semi-insulating material

Keywords

Fermi level; Hall mobility; III-V semiconductors; compensation; copper; deep levels; diffusion; gallium arsenide; impurity distribution; EL2 donor; Fermi level; GaAs:Cu; anomalous temperature dependence; compensation process; deep donor; diffusion; electron Hall mobility; inhomogeneous impurity distribution; inhomogeneous semi-insulating material; potential fluctuations; Charge carrier processes; Copper; Electron mobility; Electron traps; Fluctuations; Gallium arsenide; Hall effect; Monitoring; Optical scattering; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570931

Filename

570931