Title :
RADFET response to photon and electron beams
Author :
Martinez Garcia, Maria Sofia ; Banqueri, Jesus ; Carvajal, Miguel A. ; Palma, Alberto J. ; Torres del Rio, Julia
Author_Institution :
Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada, Spain
Abstract :
A comparative study of Radiation-sensitive field effect transistors (RADFETs) response to photon and electron beams has been carried out in reference conditions. Both types of beams, which are routinely used in clinical radiotherapy, have been applied to RADFETs of several gate oxide thicknesses, sizes and technological processes manufactured by Tyndall National Institute, Cork, Ireland. They show very similar responses in terms of sensitivity and linearity with dose ranges typical of clinical radiation treatments.
Keywords :
biomedical electronics; electron beams; field effect transistors; photons; radiation therapy; Cork Ireland; RADFET; Tyndall National Institute; clinical radiation treatment; clinical radiotherapy; electron beam; gate oxide thickness; photon beam; radiation-sensitive field effect transistor; Photonics; RADFET; oxide thickness; photon and elecron beamst; sensitivity;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087484
