Title :
A very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology
Author :
Kamogawa, K. ; Nishikawa, K. ; Yamaguchi, C. ; Hirano, M. ; Toyoda, I. ; Tokumitsu, T.
Author_Institution :
NTT Wireless Syst. Labs., Kanagawa, Japan
Abstract :
The first completely integrated, wide-tuning range 5-GHz-band 0.5-/spl mu/m Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/Hz at 1 MHz offset from the carrier.
Keywords :
MMIC oscillators; bipolar MMIC; circuit tuning; elemental semiconductors; silicon; voltage-controlled oscillators; 3 V; 4.02 to 5.35 GHz; 5 GHz; Si; Si bipolar transistor VCO; frequency tuning range; phase noise; three-dimensional MMIC; varistor; Bipolar transistors; Circuits; Frequency; Laboratories; MMICs; Phase noise; Silicon; Tuning; Varistors; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596547
