• DocumentCode
    2463454
  • Title

    A very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology

  • Author

    Kamogawa, K. ; Nishikawa, K. ; Yamaguchi, C. ; Hirano, M. ; Toyoda, I. ; Tokumitsu, T.

  • Author_Institution
    NTT Wireless Syst. Labs., Kanagawa, Japan
  • Volume
    3
  • fYear
    1997
  • fDate
    8-13 June 1997
  • Firstpage
    1221
  • Abstract
    The first completely integrated, wide-tuning range 5-GHz-band 0.5-/spl mu/m Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/Hz at 1 MHz offset from the carrier.
  • Keywords
    MMIC oscillators; bipolar MMIC; circuit tuning; elemental semiconductors; silicon; voltage-controlled oscillators; 3 V; 4.02 to 5.35 GHz; 5 GHz; Si; Si bipolar transistor VCO; frequency tuning range; phase noise; three-dimensional MMIC; varistor; Bipolar transistors; Circuits; Frequency; Laboratories; MMICs; Phase noise; Silicon; Tuning; Varistors; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1997., IEEE MTT-S International
  • Conference_Location
    Denver, CO, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-3814-6
  • Type

    conf

  • DOI
    10.1109/MWSYM.1997.596547
  • Filename
    596547