DocumentCode
2463454
Title
A very wide-tuning range 5-GHz-band Si bipolar VCO using three-dimensional MMIC technology
Author
Kamogawa, K. ; Nishikawa, K. ; Yamaguchi, C. ; Hirano, M. ; Toyoda, I. ; Tokumitsu, T.
Author_Institution
NTT Wireless Syst. Labs., Kanagawa, Japan
Volume
3
fYear
1997
fDate
8-13 June 1997
Firstpage
1221
Abstract
The first completely integrated, wide-tuning range 5-GHz-band 0.5-/spl mu/m Si bipolar transistor voltage-controlled oscillator (VCO), based on three-dimensional MMIC technology, is presented. A 33% frequency tuning range from 4.02 to 5.35 GHz is obtained at the collector voltage of 3 V because the base-emitter resistance of the active transistor works like a varistor with a large ratio. Furthermore, the oscillation frequency is remarkably linear against the controlled base bias. The achieved phase noise is -108 dBc/Hz at 1 MHz offset from the carrier.
Keywords
MMIC oscillators; bipolar MMIC; circuit tuning; elemental semiconductors; silicon; voltage-controlled oscillators; 3 V; 4.02 to 5.35 GHz; 5 GHz; Si; Si bipolar transistor VCO; frequency tuning range; phase noise; three-dimensional MMIC; varistor; Bipolar transistors; Circuits; Frequency; Laboratories; MMICs; Phase noise; Silicon; Tuning; Varistors; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.596547
Filename
596547
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