Title :
Single event transients generation in silicon devices with pulsed laser
Author :
de Paul, Ivan ; Bandi, Franco N. ; Segura, Jaume ; Bota, Sebastia A.
Author_Institution :
Electron. Syst. Group, Univ. de les Illes Balears (UIB), Palma, Spain
Abstract :
We perform a comparative study of the characteristics and capabilities of a pulsed laser system that emulates single event injection available at the UIB with respect to similar pulsed laser test facilities in Europe (EADS, IMS) and the United States (JPL, NRL). A series of experimental measurements were taken on a silicon photodiode (Centronic OSD15-5T) used in a previous comparative study conducted by the mentioned centers.
Keywords :
laser beam effects; radiation hardening (electronics); pulsed laser system; silicon devices; single event injection emulation; single event transients generation; Measurement by laser beam; Photodiodes; Semiconductor lasers; Single event transients; Test facilities; Transient analysis; Laser beams; Single event transient; Transient analysis;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087497
