Ceramic rectifiers fabricated by carrier-assisted diffusion

Author

Fu, Shen-Li ; Cheng, Syh-yuh

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1988

fDate

9-11 May 1988

Firstpage

119

Lastpage

123

Abstract

It has been discovered that ceramic barrier layer devices fabricated by diffusion of CuO into the grain boundaries of Nb/sub 2/O/sub 5/-doped (Ba/sub 0.8/Sr/sub 0.2/) (Ti/sub 0.9/Sn/sub 0.1/)O/sub 3/ semiconducting substrates, using Li/sub 2/CO/sub 3//Bi/sub 2/O/sub 3/ liquid phase as a carrier, possess rectifying properties. The faster motion of Li/sup +/ under capillary and gravity forces and its diffusion into the grains as a p-type dopant are considered to be the source of the rectifying property. Larger grain size n-type semiconducting ceramic substrates can be fabricated by sintering the pressed ceramic disks in 2%H/sub 2//98%N/sub 2/ atmosphere for four hours.<>

Keywords

barium compounds; ceramics; niobium compounds; rectifiers; semiconductor diodes; strontium compounds; tin compounds; titanium compounds; BaO/sub 3/SrO/sub 3/TiO/sub 3/SnO/sub 3/: Nb/sub 2/O/sub 5/; CuO diffusion; H/sub 2/-N/sub 2/; Li/sub 2/CO/sub 3/-Bi/sub 2/O/sub 3/; carrier-assisted diffusion; ceramic barrier layer devices; ceramic rectifiers; p-type dopant; pressed ceramic disks; semiconducting ceramic substrates; sintering; Bismuth; Ceramics; Grain boundaries; Gravity; Niobium; Rectifiers; Semiconductivity; Strontium; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Components Conference, 1988., Proceedings of the 38th

Conference_Location

Los Angeles, CA, USA

Type

conf

DOI

10.1109/ECC.1988.12581

Filename

12581