DocumentCode :
2463744
Title :
Investigation of the resistive switching behavior in Ni/HfO2-based RRAM devices
Author :
Gonzalez, M.B. ; Acero, M.C. ; Beldarrain, O. ; Zabala, M. ; Campabadal, F.
Author_Institution :
IMB-CNM (CSIC), Inst. de Microelectron. de Barcelona, Bellaterra, Spain
fYear :
2015
fDate :
11-13 Feb. 2015
Firstpage :
1
Lastpage :
3
Abstract :
In this work, a systematic study of the electrical properties and the cycle-to-cycle variability in Ni/HfO2-based RRAM devices is presented. Besides the resistive switching behavior, attention is also given to the impact of temperature on device stability and variability.
Keywords :
electric properties; hafnium compounds; nickel; resistive RAM; Ni-HfO2; RRAM devices; cycle-to-cycle variability; device stability; electrical properties; resistive switching behavior; Electron devices; Hafnium compounds; Nickel; Stability analysis; Switches; Temperature; Temperature measurement; ALD; HfO2; Ni; RRAM; variability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
Type :
conf
DOI :
10.1109/CDE.2015.7087499
Filename :
7087499
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2463744
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