Title :
Electrical characterization of MIS capacitors based on Dy2O3-doped ZrO2 dielectrics
Author :
Garcia, H. ; Castan, H. ; Duenas, S. ; Perez, E. ; Bailon, L. ; Tamm, A. ; Kukli, K. ; Aarik, J. ; Mizohata, K.
Author_Institution :
Dipt. Electr. y Electron., Univ. of Valladolid, Valladolid, Spain
Abstract :
MIS capacitors based on Dy2O3-doped ZrO2 oxide dielectrics were studied. The oxide films were grown by ALD. Defect concentrations at the oxide/semiconductor interface and inside the oxide depended on the film annealing that reduced the interface quality and increased defect densities inside the oxide. The leakage current density decreased at moderate voltages when the amount of dysprosium in the films increased.
Keywords :
MIS capacitors; annealing; atomic layer deposition; current density; dysprosium compounds; high-k dielectric thin films; leakage currents; zirconium compounds; ALD; Dy2O3-doped ZrO2 oxide dielectrics; Dy2O3; MIS capacitors; ZrO2; defect concentrations; defect densities; dysprosium; electrical characterization; film annealing; interface quality; leakage current density; oxide films; oxide-semiconductor interface; Annealing; Capacitance; High K dielectric materials; Molecular beam epitaxial growth; Spectroscopy; Zirconium; MIS capacitors; atomic layer deposition; dysprosium oxide; electrical characterization; high-k dielectrics;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087500
