DocumentCode :
2463779
Title :
P-Channel HfO2 Nanocrystal Flash Memory
Author :
Lin, Yu-Hsien ; You, Hsin-Chiang ; Shih, Jyun-Hong ; Hong, Jin-Shi
Author_Institution :
Dept. of Electron. Eng., Nat. United Univ., Miaoli, Taiwan
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
829
Lastpage :
832
Abstract :
In this paper, we have explored the memory effect on the performance of the p-channel HfO2 nanocrystal trapping layer of SONOS-type flash memories. Band to Band hot electron injection and channel hot hole was employed for programming and erasing, respectively. The proposed p-channel SONOS-type HfO2 nanocrystal flash memory exhibits large memory windows, high program/erase speed, good endurance, and good disturbance characteristics.
Keywords :
flash memories; hafnium compounds; hot carriers; nanoelectronics; HfO2; SONOS-type flash memories; band to band hot electron injection; channel hot hole; disturbance characteristics; high program-erase speed; memory effect; memory windows; p-channel nanocrystal flash memory; p-channel nanocrystal trapping layer; Charge carrier processes; Flash memory; Hafnium compounds; Logic gates; Nanocrystals; Programming; Substrates; Flash memory; hafnium oxide; nanocrystal; p-channel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer, Consumer and Control (IS3C), 2012 International Symposium on
Conference_Location :
Taichung
Print_ISBN :
978-1-4673-0767-3
Type :
conf
DOI :
10.1109/IS3C.2012.213
Filename :
6228436
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2463779
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