Title :
Low dose radiation effects on a-Si:H TFTs
Author :
Picos, R. ; Papadopoulos, N.P. ; Lee, Czang-Ho ; Lopez-Grifol, A. ; Roca, M. ; Isern, E. ; Wong, William S. ; Garcia-Moreno, E.
Author_Institution :
Phys. Dept., Univ. de les IllesBalears, Spain
Abstract :
In this paper we analyze the effects of X-ray irradiation on a-Si:H TFTs. We have irradiated at low doses, up to 1 krad, and we have measured several transistors, obtaining coherent behaviors. The main effect is a shifting of the threshold voltage, as well as a change in the Ioff current and a change in the mobility. We discuss these effects, and find them to be around three orders of magnitude higher than in an equivalent bulk CMOS technology.
Keywords :
elemental semiconductors; radiation hardening (electronics); silicon; thin film transistors; Si; TFT; X-ray irradiation; equivalent bulk CMOS technology; low dose radiation effects; threshold voltage; Current measurement; Logic gates; Radiation effects; Semiconductor device measurement; Thin film transistors; Threshold voltage;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087501
