Title :
Anomalous low-frequency noise increase at the onset of oscillations in Gunn diodes
Author :
Garcia-Perez, O. ; Iniguez-de-la-Torre, I. ; Perez, S. ; Mateos, J. ; Gonzalez, T. ; Alimi, Y. ; Song, A.
Author_Institution :
Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
Abstract :
In this work, the presence of anomalous low-frequency noise effects in Gunn diodes has been studied and evidenced. Near the onset of Gunn instability, there is a limited range of bias voltages for which the noise significantly increases at frequencies well below the frequency of oscillation. For higher bias voltages, the oscillation becomes purer and such low-frequency noise drastically vanishes.
Keywords :
Gunn diodes; oscillations; semiconductor device noise; semiconductor device reliability; Gunn diode oscillations; Gunn instability; anomalous low-frequency noise; Density measurement; Indium gallium arsenide; Low-frequency noise; Noise measurement; Oscillators; Semiconductor diodes; Gunn devices; III–V semiconductor materials; microwave oscillators; noise measurement;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087504