• DocumentCode
    2463865
  • Title

    Anomalous low-frequency noise increase at the onset of oscillations in Gunn diodes

  • Author

    Garcia-Perez, O. ; Iniguez-de-la-Torre, I. ; Perez, S. ; Mateos, J. ; Gonzalez, T. ; Alimi, Y. ; Song, A.

  • Author_Institution
    Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
  • fYear
    2015
  • fDate
    11-13 Feb. 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, the presence of anomalous low-frequency noise effects in Gunn diodes has been studied and evidenced. Near the onset of Gunn instability, there is a limited range of bias voltages for which the noise significantly increases at frequencies well below the frequency of oscillation. For higher bias voltages, the oscillation becomes purer and such low-frequency noise drastically vanishes.
  • Keywords
    Gunn diodes; oscillations; semiconductor device noise; semiconductor device reliability; Gunn diode oscillations; Gunn instability; anomalous low-frequency noise; Density measurement; Indium gallium arsenide; Low-frequency noise; Noise measurement; Oscillators; Semiconductor diodes; Gunn devices; III–V semiconductor materials; microwave oscillators; noise measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2015 10th Spanish Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/CDE.2015.7087504
  • Filename
    7087504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2463865