Title :
High efficiency interdigitated back-contact c-Si(p) solar cells
Author :
Calle, E. ; Ortega, P. ; Lopez, G. ; Martin, I. ; Carrio, D. ; Voz, C. ; Orpella, A. ; Puigdollers, J. ; Alcubilla, R.
Author_Institution :
Micro & Nanotechnlogy Res. group MNT, Univ. Politec. de Catalunya UPC, Barcelona, Spain
Abstract :
In this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with front surface passivation using atomic layer deposited Al2O3 films on textured surfaces with random pyramids. Very low reflectance with outstanding surface recombination velocity values around 3 cm/s are achieved in our precursors. Fabricated solar cells reach efficiencies up to 20.3% (AM1.5G 1 kW/m2, T=25°C), with short circuit density Jsc, open circuit voltage Voc and fill factor FF of 40.6 mA/cm2, 648 mV and 77.2% respectively.
Keywords :
elemental semiconductors; solar cells; atomic layer deposited alumina films; baseline fabrication process; fill factor; front surface passivation; high efficiency interdigitated back-contact silicon solar cells; open circuit voltage; random pyramids; short circuit density; surface recombination velocity values; textured surfaces; Aluminum oxide; Atomic layer deposition; Passivation; Photovoltaic cells; Reflectivity; Surface texture; Atomic layer deposition; back-contact; crystalline silicon; passivation; solar cells;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087509
