Title :
Photo-Resist Protected Technology Application on Solution-Based IZO-TFT
Author :
Chen, Chao-Nan ; Wu, Gwo-Mei ; Su, Kuo-Hui ; Chien, How-Wen
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
Solution-based indium-znic-Voxide (IZO) thin film transistors (TFTs) with a coplanar homojunction structure using halftone technology are demonstrated. We introduced halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The electrical characteristics of the fabricated devices were examined. The saturation field effect mobility of about 0.18 cm2/Vs, the current ON/OFF ratio is about 106, and the threshold voltage (Vth) is less than 3.0 V. We know that solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD manufacturing.
Keywords :
II-VI semiconductors; electrodes; etching; field effect transistors; indium compounds; photoresists; thin film transistors; wide band gap semiconductors; zinc compounds; In2O3-ZnO; S-D electrode; TFT LCD manufacturing; channel region protection; coplanar homojunction structure; current ON-OFF ratio; etching processing; halftone technology; photoresist protected technology application; plasma processing; saturation field effect mobility; solution-based IZO-TFT; thin film transistor; threshold voltage; Fabrication; Films; Logic gates; Metals; Plasmas; Resists; Thin film transistors; IZO; Metal-Oxide based; Photo-resist Protected; Solution based; TFT;
Conference_Titel :
Computer, Consumer and Control (IS3C), 2012 International Symposium on
Conference_Location :
Taichung
Print_ISBN :
978-1-4673-0767-3
DOI :
10.1109/IS3C.2012.235
