Photo-Resist Protected Technology Application on Solution-Based IZO-TFT

Author

Chen, Chao-Nan ; Wu, Gwo-Mei ; Su, Kuo-Hui ; Chien, How-Wen

Author_Institution

Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan

fYear

2012

fDate

4-6 June 2012

Firstpage

882

Lastpage

885

Abstract

Solution-based indium-znic-Voxide (IZO) thin film transistors (TFTs) with a coplanar homojunction structure using halftone technology are demonstrated. We introduced halftone technology to produced two thickness photo-resist on IZO TFT device to protect channel region and improve the contact characteristics between IZO and S/D electrode simultaneously during plasma and etching process. The electrical characteristics of the fabricated devices were examined. The saturation field effect mobility of about 0.18 cm²/Vs, the current ON/OFF ratio is about 106, and the threshold voltage (Vth) is less than 3.0 V. We know that solution type IZO associated with photo-resist protected layer shows great potential in TFT LCD manufacturing.

Keywords

II-VI semiconductors; electrodes; etching; field effect transistors; indium compounds; photoresists; thin film transistors; wide band gap semiconductors; zinc compounds; In₂O₃-ZnO; S-D electrode; TFT LCD manufacturing; channel region protection; coplanar homojunction structure; current ON-OFF ratio; etching processing; halftone technology; photoresist protected technology application; plasma processing; saturation field effect mobility; solution-based IZO-TFT; thin film transistor; threshold voltage; Fabrication; Films; Logic gates; Metals; Plasmas; Resists; Thin film transistors; IZO; Metal-Oxide based; Photo-resist Protected; Solution based; TFT;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer, Consumer and Control (IS3C), 2012 International Symposium on

Conference_Location

Taichung

Print_ISBN

978-1-4673-0767-3

Type

conf

DOI

10.1109/IS3C.2012.235

Filename

6228449