DocumentCode :
2464388
Title :
Characterization of III-V periodic structures by spectroscopic ellipsometry and grazing X-ray reflectance
Author :
Boher, Pierre ; Stehle, Jean Louis
Author_Institution :
SOPRA SA, Bois-Colombes, France
fYear :
1996
fDate :
29 Apr-3 May 1996
Firstpage :
185
Lastpage :
188
Abstract :
Spectroscopic Ellipsometry (SE) and Grazing X-ray Reflectance (GXR) techniques are applied on a III-V periodic epitaxial structures in order to extract accurately structural informations. Thickness informations are obtained directly from Fourier transformation of the GXR spectra and confirmed by simulation of the reflectance curve. Compositions are deduced from SE regression using GXR thickness as input values. Using this method it was possible to detect g reduction of the density of the top layers. This layer imperfection is important to deduce accurate reflectance properties for the same structure
Keywords :
III-V semiconductors; X-ray scattering; ellipsometry; photoreflectance; semiconductor epitaxial layers; Fourier transformation; III-V periodic structures; density; grazing X-ray reflectance; layer imperfection; reflectance curve; spectroscopic ellipsometry; thickness information; Data mining; Ellipsometry; Fourier transforms; Mirrors; Nonhomogeneous media; Optical films; Optical sensors; Periodic structures; Reflectivity; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
Type :
conf
DOI :
10.1109/SIM.1996.570936
Filename :
570936
Link To Document :
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