DocumentCode :
2464641
Title :
Quantitative study on operation frequency limitation of multi-level high voltage power converter equipped with Si-IEGT and SiC-PiN diode
Author :
Kinjo, T. ; Takao, K. ; Tanaka, Y. ; Sung, K. ; Ohashi, H.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
fYear :
2008
fDate :
15-19 June 2008
Firstpage :
2909
Lastpage :
2913
Abstract :
This paper has quantitatively investigated the operation frequency limitation of high voltage NPC 3-level converter with 4.5 kV Si-IEGT and 5 kV SiC-PiN diode hybrid pair. In order to investigate the limitation, the high speed switching capability of the hybrid pair under a hard drive condition is evaluated, and an exact power loss estimation method is proposed to estimate the power losses of NPC 3-level converter with high voltage bipolar power devices. The possibility of high frequency operation in NPC 3-level converter with the hybrid pair under the hard drive condition is revealed by using the power loss estimation method.
Keywords :
p-i-n diodes; power bipolar transistors; power convertors; power semiconductor diodes; silicon compounds; NPC 3-level converter; Si-IEGT diode; SiC; SiC-PiN diode; bipolar power devices; hard drive condition; multilevel high voltage power converter; operation frequency limitation; power loss estimation method; voltage 4.5 kV; voltage 5 kV; Diodes; Filters; Frequency conversion; Frequency estimation; Insulated gate bipolar transistors; Switching circuits; Switching converters; Switching frequency; Transformers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2008. PESC 2008. IEEE
Conference_Location :
Rhodes
ISSN :
0275-9306
Print_ISBN :
978-1-4244-1667-7
Electronic_ISBN :
0275-9306
Type :
conf
DOI :
10.1109/PESC.2008.4592391
Filename :
4592391
Link To Document :
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