Author_Institution :
Inst. for Semiconductor Phys., Frankfurt, Germany
fDate :
April 29 1996-May 3 1996
Abstract :
The growth and properties of Si1-yCy and Si 1-x-yGexCy alloys pseudomorphically strained on Si(001) will be reviewed, Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si1-x-yGexCy layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed
Keywords :
Ge-Si alloys; band structure; crystal microstructure; interstitials; mechanical properties; semiconductor doping; semiconductor epitaxial layers; semiconductor materials; silicon compounds; solid solubility; thermal stability; Si/sub 1-y/C/sub y/; SiC; SiGeC; SiGeC materials; band structure; bulk solubility; epitaxial layers; growth; interstitial; mechanical properties; microscopic structure; properties; thermal stability; Atomic layer deposition; Capacitive sensors; Compressive stress; Germanium silicon alloys; Metastasis; Physics; Semiconductor materials; Silicon carbide; Silicon germanium; Surface reconstruction;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse, France
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570938
