SiGeC materials

Author

Osten, H.J.

Author_Institution

Inst. for Semiconductor Phys., Frankfurt, Germany

fYear

1996

fDate

April 29 1996-May 3 1996

Firstpage

195

Lastpage

200

Abstract

The growth and properties of Si_1-yC_y and Si _1-x-yGe_xC_y alloys pseudomorphically strained on Si(001) will be reviewed, Although the bulk solubility of carbon in silicon is small, epitaxial layers with more than 1 at.% C can be fabricated. The relation between substitutional and interstitial carbon incorporation will be presented. Substitutionally incorporated C atoms allow strain manipulation, including the growth of strain-free or inversely strained Si_1-x-yGe_xC_y layers. The mechanical properties, microscopic structure, thermal stability, as well as the influence of C atoms on band structure will be discussed

Keywords

Ge-Si alloys; band structure; crystal microstructure; interstitials; mechanical properties; semiconductor doping; semiconductor epitaxial layers; semiconductor materials; silicon compounds; solid solubility; thermal stability; Si/sub 1-y/C/sub y/; SiC; SiGeC; SiGeC materials; band structure; bulk solubility; epitaxial layers; growth; interstitial; mechanical properties; microscopic structure; properties; thermal stability; Atomic layer deposition; Capacitive sensors; Compressive stress; Germanium silicon alloys; Metastasis; Physics; Semiconductor materials; Silicon carbide; Silicon germanium; Surface reconstruction;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse, France

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570938

Filename

570938