DocumentCode
2465488
Title
Comparison of arsenic diffusion in Si and Si1-xGex epilayers
Author
Lyu-Fan Zou ; Wang, Z.G. ; Sun, D.Z. ; Fan, T.W. ; Liu, X.F. ; Zhang, J.W.
Author_Institution
Inst. of Semicond., Acad. Sinica, Beijing, China
fYear
1996
fDate
29 Apr-3 May 1996
Firstpage
211
Lastpage
214
Abstract
Rapid thermal annealing of ion implanted arsenic in relaxed Si1-xGex (x=0.90~0.43) epilayers was studied and compared to diffusion in Si. Sample analysis included depth profiling by secondary-ion-mass spectroscopy, and electrical characterization employing spreading resistance probe measurement. Arsenic chemical concentration profiles indicated that the behavior of implanted As in Si 1-xGex after RTA was different from that in Si, and the Si1-xGex samples with the higher x exhibited box-shaped, concentration-dependent diffusion profiles. The maximum concentrations of electrically active arsenic in Si0.57 Ge0.43 were found to be 3.0×1019 and 4.2×1019 cm-3 for 18 second anneals at 950°C and 1050°C, respectively, which is about one order of magnitude lower than the arsenic equilibrium solubility limit for arsenic-implanted Si
Keywords
Ge-Si alloys; diffusion; doping profiles; elemental semiconductors; ion implantation; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor materials; silicon; 1050 degC; 950 degC; Si:As; SiGe:As; arsenic diffusion; depth profiling; electrically active arsenic; gas source MBE; rapid thermal annealing; relaxed epilayers; secondary-ion-mass spectroscopy; spreading resistance probe; Atomic measurements; Current density; Electric variables measurement; Electrical resistance measurement; Heating; Instruments; Nitrogen; Rapid thermal annealing; Societies; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location
Toulouse
Print_ISBN
0-7803-3179-6
Type
conf
DOI
10.1109/SIM.1996.570941
Filename
570941
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