Title :
Comparison of arsenic diffusion in Si and Si1-xGex epilayers
Author :
Lyu-Fan Zou ; Wang, Z.G. ; Sun, D.Z. ; Fan, T.W. ; Liu, X.F. ; Zhang, J.W.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
fDate :
29 Apr-3 May 1996
Abstract :
Rapid thermal annealing of ion implanted arsenic in relaxed Si1-xGex (x=0.90~0.43) epilayers was studied and compared to diffusion in Si. Sample analysis included depth profiling by secondary-ion-mass spectroscopy, and electrical characterization employing spreading resistance probe measurement. Arsenic chemical concentration profiles indicated that the behavior of implanted As in Si 1-xGex after RTA was different from that in Si, and the Si1-xGex samples with the higher x exhibited box-shaped, concentration-dependent diffusion profiles. The maximum concentrations of electrically active arsenic in Si0.57 Ge0.43 were found to be 3.0×1019 and 4.2×1019 cm-3 for 18 second anneals at 950°C and 1050°C, respectively, which is about one order of magnitude lower than the arsenic equilibrium solubility limit for arsenic-implanted Si
Keywords :
Ge-Si alloys; diffusion; doping profiles; elemental semiconductors; ion implantation; rapid thermal annealing; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor materials; silicon; 1050 degC; 950 degC; Si:As; SiGe:As; arsenic diffusion; depth profiling; electrically active arsenic; gas source MBE; rapid thermal annealing; relaxed epilayers; secondary-ion-mass spectroscopy; spreading resistance probe; Atomic measurements; Current density; Electric variables measurement; Electrical resistance measurement; Heating; Instruments; Nitrogen; Rapid thermal annealing; Societies; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570941
