Title :
SPRAM (SPin-transfer torque RAM) Technology for Green IT World
Author :
Kawahara, T. ; Takahashi, H. ; Ohno, H.
Author_Institution :
Central Res. Lab., Kokubunji
Abstract :
In Green IT world, we could enjoy our daily life with immersed digital equipments that have perfect normally OFF and instant ON functions resulting from environment-conscious technologies. For achieving this, firstly we need a non-volatile RAM technology, namely endowed with non-volatility, infinite number of write cycles, and fast operation at the same time. SPRAM is the most promising solution for this demand.
Keywords :
random-access storage; Green IT world; OFF functions; ON functions; SPRAM; immersed digital equipments; nonvolatile RAM; spin-transfer torque RAM; write cycles; Computer architecture; Energy consumption; Laboratories; Large-scale systems; Logic testing; Nonvolatile memory; Random access memory; Read-write memory; Resumes; Torque;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760631
