Title :
Study of microscopic defects in silicon oxynitride films prepared by plasma-enhanced chemical vapor deposition process
Author :
Tam, W.S. ; Wong, C.K. ; Kok, C.W.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Kowloon
Abstract :
This work studies the microscopic defects in oxynitride films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. X-ray photoelectron spectroscopy (XPS) study indicates that the silicon atoms in the films are randomly bonded with nitrogen and oxygen atoms. Photoluminescence measurements were conducted to study the radiative defect centers in the oxynitride films and found that the oxynitride films have a significant amount of non-bridging oxygen defects. Fourier Transform Infrared (FTIR) measurements indicate that the as-deposited films contain significant amount of hydrogen and OH groups.
Keywords :
Fourier transform spectra; X-ray photoelectron spectra; dielectric thin films; infrared spectra; photoluminescence; plasma CVD; silicon compounds; Fourier transform infrared spectra; SiOxNy; X-ray photoelectron spectroscopy; microscopic defects; nonbridging oxygen defects; photoluminescence; plasma-enhanced chemical vapor deposition; radiative defect centers; silicon oxynitride films; Atomic layer deposition; Atomic measurements; Chemical vapor deposition; Conductive films; Microscopy; Plasma chemistry; Plasma measurements; Plasma x-ray sources; Semiconductor films; Silicon; Fourier transform infrared spectroscopy; defect; photoluminescence; silicon oxynitride;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760636
