Title :
Design and challenges of passive UHF RFID tag in 90nm CMOS technology
Author :
Hong, Yang ; Chan, Chi Fat ; Guo, Jianping ; Ng, Yuen Sum ; Shi, Weiwei ; Ho, Marco ; Leung, Lai Kan ; Leung, Ka Nang ; Choy, Chiu Sing ; Pun, Kong Pang
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Hong Kong
Abstract :
This paper presents a low-power, passive, EPCtrade C1G2-compatible UHF RFID tag design implemented in a 90 nm CMOS technology. In order to reduce its cost, diode-connected NMOSFETs in a standard CMOS technology is used instead of Schottky diodes. A sub-1 V, low temperature-coefficient voltage reference, using self-biased mutual compensation without large resistors, is proposed to save the chip area. To minimize the substantial leakage power in this technology, the baseband processor is designed with sufficient margins for subthreshold power supply. An energy-aware scheme is also implemented. Better power saving is achieved by using the RF envelope as clock and control signal of gating clock.
Keywords :
CMOS integrated circuits; UHF integrated circuits; radiofrequency identification; CMOS technology; baseband processor; diode-connected NMOSFETs; gating clock signal; leakage power; low temperature-coefficient voltage reference; passive UHF RFID tag; self-biased mutual compensation; size 90 nm; subthreshold power supply; voltage 1 V; Baseband; CMOS technology; Clocks; Costs; Low voltage; MOSFETs; Passive RFID tags; RFID tags; Resistors; Schottky diodes;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760649