Analog/RF performance analysis of coaxial carbon nanotube MOS field effect transistor from non-equilibrium Green’s function simulation

Author

Che, Yuchi ; Tao, Yadong ; Liu, Feng ; Zhou, Xingye ; He, Jin

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Based on the non-equilibrium Greenpsilas function simulation, the analog/RF performance of Coaxial Carbon Nanotube Field Effect Transistor (CNTFET) including the trans-conductance efficiency g_m/I_d, cutoff frequency f_t, and maximum oscillation frequency f_max are analyzed in details. The analysis method is described and the CNTFET analog/RF performance dependence on the operation bias, device chirality, and gate oxide thickness are demonstrated. These results will be useful for the device scientists and circuit engineers to optimize the CNTFET structure and improve its circuit performance for the potential analog/RF application in near future.

Keywords

Green´s function methods; MOSFET; carbon nanotubes; circuit optimisation; analog/RF performance analysis; coaxial carbon nanotube MOS field effect transistor; non-equilibrium Green function simulation; Analytical models; CNTFETs; Carbon nanotubes; Coaxial components; Cutoff frequency; FETs; Green´s function methods; Performance analysis; Poisson equations; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760651

Filename

4760651