DocumentCode
2465931
Title
A 155-GHz monolithic InP-based HEMT amplifier
Author
Wang, H. ; Lai, R. ; Chen, Y.C. ; Kok, Y.L. ; Huang, T.W. ; Block, T. ; Streit, D. ; Liu, P.H. ; Siegel, P. ; Allen, B.
Author_Institution
TRW Space & Electron. Group, Redondo Beach, CA, USA
Volume
3
fYear
1997
fDate
8-13 June 1997
Firstpage
1275
Abstract
This paper presents the development, of a three-stage 155-GHz monolithic low noise amplifier (LNA) using 0.1-/spl mu/m pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology. This amplifier exhibits a measured small signal gain of 12 dB at 153-155 GHz, and more than 10-dB gain from 151 to 156 GHz. This is the highest frequency amplifier ever reported using three terminal devices.
Keywords
HEMT integrated circuits; field effect MIMIC; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 12 dB; 151 to 156 GHz; HEMT amplifier; InAlAs-InGaAs-InP; low noise amplifier; millimetre-wave amplifiers; pseudomorphic HEMT technology; small signal gain; three terminal devices; Frequency; Gain measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MMICs; Performance gain; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.596559
Filename
596559
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