Title :
A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs
Author :
Liu, Feilong ; Zhang, Jian ; He, Frank ; Liu, Feng ; Zhang, Lining ; Chan, Mansun
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen
Abstract :
This paper presents a charge-based compact model for the arbitrary doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poissonpsilas equation with fixed charge and inversion charge terms, an accurate equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sahpsilas dual integral, a drain current expression with concise form is derived. Based on the Ward-Duttonpsilas linear-charge-partition method and the current continuity principle, all trans-capacitances are obtained analytically. The developed model is valid in all operation regions without any smooth function. The model predictions have been extensively verified by 3D numerical simulations with a wide range of geometrical parameters and channel doping concentrations.
Keywords :
MOSFET; Poisson equation; doping profiles; semiconductor doping; MOSFET; Poisson equation; Ward-Dutton linear-charge-partition method; channel doping concentrations; charge-based compact model; current continuity principle; drain current; inversion charge; trans-capacitance; Doping; Helium; Integral equations; MOSFETs; Numerical simulation; Poisson equations; Predictive models; Semiconductor process modeling; Solid modeling; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760654
