DocumentCode :
2465974
Title :
Advanced high thermal conductivity ceramics for power microwave tubes
Author :
Xu, G. ; Carmel, Y. ; Lloyd, I.K. ; Wilson, O.C., Jr. ; Olorunyolemi, T.
Author_Institution :
Maryland Univ., College Park, MD, USA
fYear :
2002
fDate :
2002
Firstpage :
38
Lastpage :
39
Abstract :
Summary form only given. Microwave sintering approaches have been used to develop a family of AlN based composites that exhibit superior thermal conductivities and tailored dielectric losses. These materials are needed to replace toxic BeO-based composites for power microwave tube applications. Our activities concentrated on the improvement of thermal conductivity, dielectric and mechanical properties (hardness and toughness) of various aluminum nitride composites. Single phase, polycrystalline AlN with thermal conductivity up to 224 W/mK and dielectric loss of tan δ=0.01 was achieved by controlled microwave processing. The addition of controlled amounts of TiB2 and SiC increased the dielectric losses while maintaining relatively high thermal conductivity values. These advanced AlN based composites can be used in power microwave tubes for suppression of mode competition in cavities, support helices in TWTs, and for microwave windows.
Keywords :
absorbing media; aluminium compounds; ceramics; dielectric materials; electromagnetic wave absorption; microwave materials; microwave tubes; permittivity; silicon compounds; sintering; thermal conductivity; titanium compounds; travelling wave tubes; AlN; AlN based composites; AlN-TiB2-SiC; BeO; SiC addition; TWT support helices; TiB2 addition; cavity mode competition suppression; dielectric losses; high thermal conductivity ceramics; material hardness; material toughness; microwave sintering; microwave windows; power microwave tubes; single-phase polycrystalline AlN; thermal conductivity; toxic BeO-based composites; travelling wave tubes; Aluminum nitride; Ceramics; Composite materials; Conducting materials; Dielectric losses; Dielectric materials; Mechanical factors; Process control; Silicon carbide; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference, 2002. IVEC 2002. Third IEEE International
Print_ISBN :
0-7803-7256-5
Type :
conf
DOI :
10.1109/IVELEC.2002.999248
Filename :
999248
Link To Document :
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