Temperature dependence of AlGaN/GaN HEMT-compatible lateral field effect rectifier

Author

Wong, King-Yuen ; Chen, Wanjun ; Huang, Wei ; Chen, Kevin J.

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The lateral field effect rectifier (L-FER) on AlGaN/GaN heterostructure on silicon substrate compatible with the HEMT process has been characterized for high temperature operation (up to 250 degC). The proposed rectifier takes advantage of adjusting the forward-on voltage to a slightly positive value by fluorine plasma treatment. The temperature dependences of the forward-on voltage and the on-resistance of the rectifiers with different drift lengths were measured. The knee voltage of the rectifier exhibits very little temperature dependence as the temperature raised to 250 degC. These results indicate that L-FER is promising for operation over a wide range of ambient temperatures.

Keywords

III-V semiconductors; aluminium compounds; field effect devices; gallium compounds; high electron mobility transistors; rectifiers; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN heterostructure; HEMT process; Si; fluorine plasma treatment; high temperature operation; lateral field effect rectifier; silicon substrate; temperature 250 degC; temperature dependence; Aluminum gallium nitride; Gallium nitride; HEMTs; Length measurement; Plasma measurements; Plasma temperature; Rectifiers; Silicon; Temperature dependence; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760656

Filename

4760656