Title :
Terahert detection analysis of nanowire gated field effect transistor
Author :
Chen, Yu ; He, Jin ; Mu, Xuehao ; Lou, Haijun ; Zhang, Lining ; Song, Yan
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen
Abstract :
An analytical terahertz (THz) detection model of the Silicon nanowire MOSFET (NWFET) is developed in this paper. Beginning from the fundamental hydrodynamic transport equations, the expressions of the velocity spatial distribution and inversion charge transport are obtained. Under the reasonable boundary, an analytical model of the photoresponse of the NWFET is derived out. The comparison between analytical calculation and numerical results confirmed the proposed model. Moreover, the plasma wave transport behavior in the NWFET is analyzed in detail from the presented model and some significant characteristics are demonstrated.
Keywords :
MOSFET; charge exchange; nanowires; plasma transport processes; submillimetre wave detectors; Si; hydrodynamic transport equations; inversion charge transport; nanowire gated field effect transistor; photoresponse; plasma wave transport behavior; silicon nanowire MOSFET; terahert detection analysis; velocity spatial distribution; Analytical models; Electrons; Equations; FETs; Helium; Hydrodynamics; Plasma waves; Radiation detectors; Silicon; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760659
