DocumentCode :
2466142
Title :
Donor doping calibration in 4H-SiC using photoluminescence spectroscopy
Author :
Ivanov, I.G. ; Hallin, C. ; Henry, A. ; Kordina, O. ; Janzen, E.
Author_Institution :
Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden
fYear :
1996
fDate :
29 Apr-3 May 1996
Firstpage :
223
Lastpage :
226
Abstract :
The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 1014 cm-3 to 3.1016 cm-3. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted
Keywords :
excitons; impurity states; nitrogen; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor materials; silicon compounds; 4H-SiC; SiC:N; donor doping calibration; free-exciton related emission; impurity concentration; n-type doping; nitrogen donor impurity; photoluminescence; Calibration; Doping; Impurities; Iron; Luminescence; Photoluminescence; Silicon carbide; Spectroscopy; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
Type :
conf
DOI :
10.1109/SIM.1996.570944
Filename :
570944
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2466142
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