Title :
A global continuous channel potential solution for double-gate MOSFETs
Author :
Liu, Feng ; He, Jin ; Zhang, Jian ; Chan, Mansun J.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen
Abstract :
A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to various doping concentrations and geometrical sizes, without any fitting parameter.
Keywords :
MOSFET; Poisson equation; doping profiles; elemental semiconductors; semiconductor device models; semiconductor doping; semiconductor thin films; silicon; 1-D Poisson´s equation; Si; doping concentrations; fitting parameter; geometrical sizes; global continuous channel potential solution; modeling; numerical simulations; silicon film; symmetric double-gate MOSFETs; Doping; Helium; MOSFETs; Numerical simulation; Poisson equations; Semiconductor device modeling; Semiconductor films; Semiconductor process modeling; Silicon; Voltage-controlled oscillators;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760671
