A global continuous channel potential solution for double-gate MOSFETs

Author

Liu, Feng ; He, Jin ; Zhang, Jian ; Chan, Mansun J.

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A global continuous channel potential solution is proposed for the modeling of symmetric double-gate (DG) MOSFETs. To obtain the channel potential, from accumulation to inversion regions, 1-D Poissonpsilas equation in the silicon film of the DG MOSFETs is solved physically. The extensive comparisons between the calculated results and numerical simulations illustrate that the analytical solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to various doping concentrations and geometrical sizes, without any fitting parameter.

Keywords

MOSFET; Poisson equation; doping profiles; elemental semiconductors; semiconductor device models; semiconductor doping; semiconductor thin films; silicon; 1-D Poisson´s equation; Si; doping concentrations; fitting parameter; geometrical sizes; global continuous channel potential solution; modeling; numerical simulations; silicon film; symmetric double-gate MOSFETs; Doping; Helium; MOSFETs; Numerical simulation; Poisson equations; Semiconductor device modeling; Semiconductor films; Semiconductor process modeling; Silicon; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760671

Filename

4760671