Title :
Modeling and simulation of power trench MOSFET with SiGeC-based channel
Author :
Wang, Ying ; Hu, Hai-Fan ; Cheng, Chao
Author_Institution :
Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin
Abstract :
A structure of power trench MOSFET with SiGeC-channel is presented in this paper. The improved device characteristics by incorporating carbon atoms in SiGe-channel is simulated and analyzed. Compared with SiGe-channel UMOSFET, the structure has not only lower on-state resistance but also better thermal stability. The dependence of device characteristics on the critical thickness of SiGeC-channel is also studied. The simulated results show that the critical thickness is reduced largely because of adding carbon atoms to SiGe-channel. It indicates that SiGeC alloy is a promising channel material for power trench MOSFET application.
Keywords :
Ge-Si alloys; power MOSFET; semiconductor device models; semiconductor materials; thermal stability; SiGe; SiGeC-channel critical thickness; modeling; power trench MOSFET; simulation; thermal stability; Analytical models; Atomic layer deposition; Boron; Geometry; Germanium silicon alloys; MOSFET circuits; Optoelectronic devices; Power MOSFET; Semiconductor materials; Silicon germanium; SiGeC alloys; channel; power device; simulation; trench MOSFET;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760673
