Self-clamping thyristor mode LIGBT based on SOI

Author

Xie, Gang ; Zhang, Bo

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A new structure of SOI-LIGBT operated at thyristor mode with unique self-clamping character (TM-SOI LIGBT) integrated in SPICs has been studied and analyzed. We used 15 mum SOI layer and 3 mum SiO4, respectively to obtain a breakdown voltage exceeding 500 V. Comparison of not only a trade off between forward voltage drop and turn off loss but also a forward biased safe operating area (FBSOA) with conventional LIGBT based on SOI has been investigated. 2D Mix-mode numerical analysis using MEDICI shows that the proposed structure dramatically reduced the forward saturation voltage drop to about 21.3%, and turn off time 20%, with large FBSOA and has better current density when at on state and controllable current capability when at off state.

Keywords

insulated gate bipolar transistors; silicon-on-insulator; thyristors; SOI wafer; breakdown voltage; forward biased safe operating area; lateral insulated gate bipolar transistors; mix-mode numerical analysis; self-clamping; thyristor mode; Current density; Dielectrics; Doping profiles; Electron emission; MOSFETs; Numerical analysis; Physics; Threshold voltage; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760675

Filename

4760675