Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes

Author

Park, J.K. ; Yun, I.

Author_Institution

Dept. of Electr. & Electron. Eng., Yonsei Univ., Yonsei

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

InP/InGaAs avalanche photodiodes (APDs) have been widely used for high-speed optical receivers because of their advantages of high avalanche gain and high sensitivity. Generally, avalanche photodiodes are operated at near the breakdown voltage to improve gain characteristic. However, process variations of APD can cause the fluctuations of characteristics, such as avalanche gain, breakdown voltage, and dark current, which degrade proper operating characteristics of APDs. In this paper, the characteristic variations of InP/InGaAs avalanche photodiodes are investigated using commercial TCAD tool.

Keywords

III-V semiconductors; amplification; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; semiconductor device breakdown; semiconductor device models; technology CAD (electronics); InP-InGaAs; TCAD; avalanche gain; breakdown voltage; dark current; high-speed avalanche photodiodes; high-speed optical receivers; Absorption; Avalanche photodiodes; Degradation; Doping; Fluctuations; Indium gallium arsenide; Indium phosphide; Optical receivers; Semiconductor process modeling; Testing; avalanche gain; avalanche photodiodes; process variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760679

Filename

4760679