Title :
Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of poisson’s equation
Author :
Hu, Vita Pi-Ho ; Wu, Yu-Sheng ; Su, Pin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poissonpsilas equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (TBOX) and back-gate bias (Vback-gate) on the electrostatic integrity of GeOI devices are also examined.
Keywords :
MOSFET; Poisson equation; elemental semiconductors; germanium; Ge; Poisson equation; back-gate bias; buried oxide thickness; channel length; channel thickness; electrostatic integrity; germanium-on-insulator; ultra-thin-body GeOI MOSFET; Analytical models; Doping; Electrostatic analysis; Germanium; Leakage current; MOSFET circuits; Permittivity; Poisson equations; Semiconductor process modeling; Subthreshold current;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760684
