• DocumentCode
    2466586
  • Title

    Millimeter-wave waveguide-bandwidth cryogenically-coolable InP HEMT amplifiers

  • Author

    Pospieszalski, M.W. ; Lakatosh, W.J. ; Wollack, E. ; Nguyen, L.D. ; Minh Le ; Lui, M. ; Takyiu Liu

  • Author_Institution
    Nat. Radio Astron. Obs., Charlottesville, VA, USA
  • Volume
    3
  • fYear
    1997
  • fDate
    8-13 June 1997
  • Firstpage
    1285
  • Abstract
    The design, construction and performance of 65-90 GHz and 75-110 GHz low-noise cryogenically-coolable amplifiers are presented. A comparison between modeled and measured performance is shown. A laboratory receiver exhibiting an average noise of 50 K across 65-90 GHz and 70 K across 75-110 GHz is described. These are the widest band and lowest noise HEMT receivers ever reported at these frequencies.
  • Keywords
    HEMT circuits; III-V semiconductors; cryogenic electronics; indium compounds; millimetre wave amplifiers; millimetre wave receivers; wideband amplifiers; 65 to 90 GHz; 75 to 110 GHz; InP; InP HEMT amplifier; cryogenic cooling; low-noise amplifier; millimeter-wave waveguide-bandwidth; receiver; Circuit noise; Couplings; Cryogenics; HEMTs; Indium phosphide; Low-noise amplifiers; Millimeter wave technology; Observatories; Radio astronomy; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1997., IEEE MTT-S International
  • Conference_Location
    Denver, CO, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-3814-6
  • Type

    conf

  • DOI
    10.1109/MWSYM.1997.596562
  • Filename
    596562