Title :
A 0.9V 2.7µW small-area 100µs+ analog CMOS tunable-delay circuit utilizing Miller effect
Author :
Ng, David C W ; Wong, Ngai ; Kwong, David K K
Author_Institution :
IC Designs Group of the Hong Kong, Appl. Sci. & Technol. Res. Inst.
Abstract :
We report a novel analog delay circuit based on Miller effect that features small die area and tunable delay in the order of 100 mus, without using any external component. The delay time can be tuned by varying the biasing current, capacitor sizes, transconductance of the gain-stage transistor and the corresponding output impedances. The turn-on threshold of the delay circuit can also be raised, as required in some applications, by utilizing the body effect of the input transistors. The circuit has a very low startup voltage (ap0.9 V) and consumes a very low power (ap2.7 muW) in a standard 1 mum pure CMOS process with Vtn ap 0.65 V and Vtp ap 0.8 V at 25degC. Circuit operations are elaborated and its function is verified by simulation and silicon measurement.
Keywords :
CMOS analogue integrated circuits; capacitors; delay circuits; electric admittance; electric impedance; transistors; Miller effect; analog CMOS tunable-delay circuit; biasing current; capacitor sizes; gain-stage transistor; input transistors; output impedances; power 2.7 muW; startup voltage; temperature 25 degC; transconductance; turn-on threshold; voltage 0.9 V; CMOS analog integrated circuits; CMOS process; Capacitors; Circuit simulation; Delay effects; Impedance; Low voltage; Silicon; Transconductance; Tunable circuits and devices;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760685