• DocumentCode
    2466644
  • Title

    A modified high-performance structure of low-voltage CMOS Op-amp

  • Author

    Ahmadpour, A. ; Fouladi, R.

  • Author_Institution
    Dept. of Electr. Eng., Islamic Azad Univ.-Lahijan Branch, Lahijan
  • fYear
    2008
  • fDate
    8-10 Dec. 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    A modified high-performance structure of low-voltage CMOS folded-cascode op-amp for switched-capacitor (SC) applications, with a 50 MHZ clock-frequency and a single 2V supply voltage, is presented. The proposed two-stage OTA is a A/AB class that combines a novel rail-to-rail folded-cascode as the first-stage with active current mirrors as the second stage. Due to the AB class operation in the second stage, slew limiting only occurs in the first stage, So, it cause lower power dissipation for SC circuits. Also, it employs the cascode compensation scheme for fast settling. Using the proposed methodology, the optimum values for the op-amp device sizes of all stages are determined in order to optimize all of the characteristics. Trade-offs among such factors as bias-current, speed, noise and power-dissipation are made evident. This op-amp is designed in 0.18 um and 0.35 um CMOS (level 49) twin-well TSMC process, and is simulated with Hspice. Finally, this structure is checked for a typical switched-capacitor integrator, and with all process corners from -50degc to +100degc.
  • Keywords
    CMOS integrated circuits; current mirrors; operational amplifiers; switched capacitor networks; A-AB class; Hspice; OTA; active current mirrors; cascode compensation scheme; frequency 50 MHz; low-voltage CMOS folded-cascode op-amp; rail-to-rail folded-cascode; switched-capacitor applications; switched-capacitor integrator; temperature -50 degC to 100 degC; voltage 2 V; Analog circuits; CMOS technology; Circuit noise; Circuit simulation; Clocks; Feedback circuits; Frequency; Operational amplifiers; Switches; Voltage; Clock-frequency; Folded-cascode Op-amp; SC applications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-2539-6
  • Electronic_ISBN
    978-1-4244-2540-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2008.4760687
  • Filename
    4760687