Title :
Accurate modeling and simulation of parallel interconnection in high-speed integrated circuits
Author :
Gao, D.S. ; Yang, A.T. ; Kang, S.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
The evaluation of the time-domain performance of interconnection lines is becoming increasingly more important in the analysis and design of high-speed integrated circuits. An accurate computer model for n coupled microstrip lines is developed for circuit simulation. Modal analysis is applied to decouple the n coupled line system into n independent lines and the characteristic solution of the lossy transmission line equation is modeled into a simple time-varying equivalent circuit. This model has been implemented into a circuit simulator, called iSMILE, that significantly reduces the model development time. Simulation results on propagation delay times and crosstalks are presented for the case of high-speed GaAs HEMT (high-electron-mobility transistor) integrated circuits.<>
Keywords :
III-V semiconductors; circuit analysis computing; field effect integrated circuits; gallium arsenide; integrated circuit technology; transmission line theory; GaAs; HEMT ICs; computer model; coupled microstrip lines; crosstalks; high-speed integrated circuits; iSMILE; lossy transmission line equation; model analysis; modeling; parallel interconnection; propagation delay times; simulation; time-domain performance; time-varying equivalent circuit; Circuit simulation; Computational modeling; Coupling circuits; HEMTs; High speed integrated circuits; Integrated circuit interconnections; Microstrip; Modal analysis; Performance analysis; Time domain analysis;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo, Finland
DOI :
10.1109/ISCAS.1988.15357