Title :
Influence of contact positioning on the performance of stress induced MOSFETs
Author :
Zhang, Xiang ; Wu, Wei ; Du, Gang ; Han, Ruqi ; Liu, Xiaoyan
Abstract :
In this paper, strain induced Si MOSFETs with multiple contact positioning strategies are simulated by ISE TCAD tool. The strain distribution of the MOSFETs with symmetric and asymmetric drain/source structure is investigated. The performance of the devices such as the Idsat and transfer characteristics is also simulated and compared. The results will help to model the characteristics of MOSFETs considering layout dependence.
Keywords :
MOSFET; semiconductor device models; ISE TCAD tool; asymmetric drain-source structure; contact positioning; multiple contact positioning; stress induced MOSFET; symmetric drain-source structure; Capacitive sensors; Conductivity; DSL; Doping profiles; MOS devices; MOSFETs; Piezoresistance; Semiconductor process modeling; Silicon; Tensile stress; MOSFETs; layout dependence; stress;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760696
