Scaling analysis of Phase Change Memory (PCM) driving devices

Author

Li, Lin ; Chan, Mansun

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

2008

fDate

8-10 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

The scalability of PN diode and Field Effect Transistor (FETs) as a Phase Change Memory (PCM) driving device is investigated in this work. The study is carried using vertical Gate-All-Around (GAA) MOSFETs with the same cross-sectional channel geometry as the PN diodes. Through extensive 3-D device simulations from 90nm down to 22nm technology node, it is shown that both PN diode and cylindrical GAA MOSFET can supply the required driving current for the PCRAM cell down in all technology nodes. As a general rule, PN diode as PCM driving device is superior to GAA MOSFET at larger technology nodes while the superiority become negligible as the technology node is scaled further down the roadmap. In addition, the scaling effects on cross-talk issues of driving devices are also investigated.

Keywords

MOSFET; driver circuits; phase change memories; semiconductor diodes; 3-D device simulations; PCM driving device; PCRAM cell; PN diode; cross-sectional channel geometry; field effect transistor; phase change memory driving devices; scaling analysis; vertical gate-all-around MOSFETs; Diodes; FETs; Geometry; MOSFETs; Material storage; Phase change materials; Phase change memory; Phase change random access memory; Scalability; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-2539-6

Electronic_ISBN

978-1-4244-2540-2

Type

conf

DOI

10.1109/EDSSC.2008.4760699

Filename

4760699