Title :
Design and characterization of FET based cold/hot noise sources
Author :
Dunleavy, L.P. ; Smith, M.C. ; Lardizabal, S.M. ; Fejzuli, A. ; Roeder, R.S.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
Innovative design, modeling, and characterization methods are described for FET cold noise sources. A developed InP HEMT cold/hot noise source demonstrates 105 K in the 18-22 GHz range; the highest reported frequency for a FET cold noise source. Measurements confirm variable source temperature from 105 K to over 1000 K.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; microwave field effect transistors; noise generators; semiconductor device noise; 18 to 22 GHz; FET; InP; InP HEMT; cold noise source; design; equivalent temperature; hot noise source; model; Antenna measurements; Calibration; Circuit noise; FETs; Frequency; Impedance matching; Noise measurement; Radiometers; Temperature distribution; Temperature measurement;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596564
