Title :
Effects of uniaxial strain on the gate capacitance of double gate MOSFETs
Author :
Shams, Md Itrat Bin ; Alam, Md Kawsar ; Khosru, Quazi D M
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka
Abstract :
Gate capacitance versus voltage (C-V) characteristics for double gate MOSFETs with uniaxially strained silicon substrate are presented incorporating wave function penetration effect. Changes in capacitance with stress levels up to 5 GPa are studied. Physical insights of the capacitance value change are also discussed. Contributions of band splitting and effective mass change in C-V due to uniaxial strain are analyzed. Dependencies of C-V change on doping density and body thickness for uniaxial strain are revealed for double gate MOSFETs.
Keywords :
MOSFET; capacitance; doping profiles; effective mass; insulated gate field effect transistors; wave functions; band splitting; doping density; double gate MOSFET; effective mass; gate capacitance; silicon substrate; uniaxial strain; wave function penetration effect; Capacitance; Capacitance-voltage characteristics; Doping; Effective mass; MOSFETs; Silicon; Stress; Uniaxial strain; Voltage; Wave functions;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760706
