Title :
SiGe bipolar junction transistors for microwave power applications
Author :
Henderson, G.N. ; O´Keefe, M.F. ; Boles, T.E. ; Noonan, P. ; Sledziewski, J.M. ; Brown, B.M.
Author_Institution :
M/A-COM, Lowell, MA, USA
Abstract :
High-efficiency silicon germanium (SiGe) bipolar junction transistors have been developed for 5-10 V, 1.88 GHz power amplifier applications. Class A-B biased common base parts have demonstrated a power gain G/sub p/=16 dB, one-dB compression point P/sub 1dB/=25 dBm and power-added-efficiency PAE(P/sub 1dB/)=53% at V/sub c/=5 V and >1 W output power with >15 dB gain and >50% PAE at V/sub c/=10 V. Common-emitter measurements (V/sub c/=7 V) have demonstrated an output power of 28 dBm with greater than 60% collector efficiency. Under two-tone operation, the devices have achieved an output power of 23 dBm with 37% PAE at a third-order-intermodulation distortion of IM3=30 dBc. These results represent a significant improvement over conventional Si BJT´s.
Keywords :
Ge-Si alloys; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor materials; 1 W; 1.88 GHz; 15 to 16 dB; 5 to 10 V; 50 to 53 percent; SiGe; class A-B microwave power amplifier; collector efficiency; compression point; output power; power gain; power-added-efficiency; silicon germanium bipolar junction transistor; third-order-intermodulation distortion; two-tone operation; Doping; Electrical resistance measurement; Fabrication; Frequency; Germanium silicon alloys; Microwave transistors; Parasitic capacitance; Power amplifiers; Power generation; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.596565
